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CDBDSC10650-G Silicon Carbide Power Schottky Diode

CDBDSC10650-G Description

Silicon Carbide Power Schottky Diode CDBDSC10650-G Reverse Voltage: 650 V Forward Current: 10 A RoHS Device .

CDBDSC10650-G Features

* - Rated to 650V at 10 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF Circuit Diagram C(3) C(1) A(2) 0.409(10.40) 0.394(10.00) 0.244(6.20)

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Datasheet Details

Part number
CDBDSC10650-G
Manufacturer
Comchip
File Size
87.31 KB
Datasheet
CDBDSC10650-G-Comchip.pdf
Description
Silicon Carbide Power Schottky Diode

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Silicon Carbide Power Schottky Diode Comchip
Comchip CDBDSC10650-G-like datasheet