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CDBDSC8650-G Silicon Carbide Power Schottky Diode

CDBDSC8650-G Description

Silicon Carbide Power Schottky Diode CDBDSC8650-G Reverse Voltage: 650 V Forward Current: 8 A RoHS Device .

CDBDSC8650-G Features

* - Rated to 650V at 8 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF Circuit Diagram C(3) 0.409(10.40) 0.394(10.00) 0.244(6.20) 0.236(6.00)

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Datasheet Details

Part number
CDBDSC8650-G
Manufacturer
Comchip
File Size
86.30 KB
Datasheet
CDBDSC8650-G-Comchip.pdf
Description
Silicon Carbide Power Schottky Diode

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Silicon Carbide Power Schottky Diode Comchip
Comchip CDBDSC8650-G-like datasheet