CDBDSC5650-G Silicon Carbide Power Schottky Diode

Comchip

Description

Silicon Carbide Power Schottky Diode CDBDSC5650-G Reverse Voltage: 650 V Forward Current: 5 A RoHS Device .

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Datasheet Specifications

Part number: CDBDSC5650-G
Manufacturer: Comchip
File Size: 85.89 KB
Datasheet: CDBDSC5650-G-Comchip.pdf
Description: Silicon Carbide Power Schottky Diode

Features

* - Rated to 650V at 5 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF Circuit Diagram C(3) 0.409(10.40) 0.394(10.00) 0.244(6.20) 0.236(6.00) D

CDBDSC5650-G Distributors

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CDBDSC5650-G Silicon Carbide Power Schottky Diode Comchip

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