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CDBDSC5650-G

Silicon Carbide Power Schottky Diode

CDBDSC5650-G Features

* - Rated to 650V at 5 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF Circuit Diagram C(3) 0.409(10.40) 0.394(10.00) 0.244(6.20) 0.236(6.00) D

CDBDSC5650-G Datasheet (85.89 KB)

Preview of CDBDSC5650-G PDF

Datasheet Details

Part number:

CDBDSC5650-G

Manufacturer:

Comchip

File Size:

85.89 KB

Description:

Silicon carbide power schottky diode.

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CDBDSC5650-G Silicon Carbide Power Schottky Diode Comchip

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