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CDBJFSC101200-G

Silicon Carbide Power Schottky Diode

CDBJFSC101200-G Features

* - Rated to 1200V at 10 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220F 0.404(10.25) 0.388( 9.85)

CDBJFSC101200-G Datasheet (107.87 KB)

Preview of CDBJFSC101200-G PDF

Datasheet Details

Part number:

CDBJFSC101200-G

Manufacturer:

Comchip

File Size:

107.87 KB

Description:

Silicon carbide power schottky diode.

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CDBJFSC101200-G Silicon Carbide Power Schottky Diode Comchip

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