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CDBJFSC5650-G Silicon Carbide Power Schottky Diode

CDBJFSC5650-G Description

Silicon Carbide Power Schottky Diode CDBJFSC5650-G Reverse Voltage: 650 V Forward Current: 5 A RoHS Device .

CDBJFSC5650-G Features

* - Rated to 650V at 5 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220F 0.404(10.25) 0.388( 9.85)

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Datasheet Details

Part number
CDBJFSC5650-G
Manufacturer
Comchip
File Size
108.27 KB
Datasheet
CDBJFSC5650-G-Comchip.pdf
Description
Silicon Carbide Power Schottky Diode

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Silicon Carbide Power Schottky Diode Comchip
Comchip CDBJFSC5650-G-like datasheet