Datasheet4U Logo Datasheet4U.com

CDBJFSC10650-G

Silicon Carbide Power Schottky Diode

CDBJFSC10650-G Features

* - Rated to 650V at 10 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220F 0.404(10.25) 0.388( 9.85)

CDBJFSC10650-G Datasheet (108.53 KB)

Preview of CDBJFSC10650-G PDF

Datasheet Details

Part number:

CDBJFSC10650-G

Manufacturer:

Comchip

File Size:

108.53 KB

Description:

Silicon carbide power schottky diode.

📁 Related Datasheet

CDBJFSC101200-G Silicon Carbide Power Schottky Diode (Comchip)

CDBJFSC3650-G Silicon Carbide Power Schottky Diode (Comchip)

CDBJFSC5650-G Silicon Carbide Power Schottky Diode (Comchip)

CDBJFSC8650-G Silicon Carbide Power Schottky Diode (Comchip)

CDBJSC101200-G Silicon Carbide Power Schottky Diode (Comchip)

CDBJSC101700-G Silicon Carbide Power Schottky Diode (Comchip)

CDBJSC10650-G Silicon Carbide Power Schottky Diode (Comchip)

CDBJSC3650-G Silicon Carbide Power Schottky Diode (Comchip)

CDBJSC51200-G Silicon Carbide Power Schottky Diode (Comchip)

CDBJSC5650-G Silicon Carbide Power Schottky Diode (Comchip)

TAGS

CDBJFSC10650-G Silicon Carbide Power Schottky Diode Comchip

Image Gallery

CDBJFSC10650-G Datasheet Preview Page 2 CDBJFSC10650-G Datasheet Preview Page 3

CDBJFSC10650-G Distributor