1N5195 Datasheet - Compensated Deuices Incorporated

1N5195 GENERAL PURPOSE SILICON DIODES

AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 GENERAL PURPOSE SILICON DIODES METALLURGICALLY BONDED 1N5194 1N5195 1N5196 MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA/°C From 25°C to 150°C 1.0 mA/°C From 150°C to 175°C Forward Current: 650 mA ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE VRM V RWM IO IO TA = 150°C mA 50 50 50 I FSM TP = 1/120 .

1N5195 Datasheet (31.92 KB)

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Datasheet Details

Part number:

1N5195

Manufacturer:

Compensated Deuices Incorporated

File Size:

31.92 KB

Description:

General purpose silicon diodes.

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1N5195 GENERAL PURPOSE SILICON DIODES Compensated Deuices Incorporated

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