BDY54 Datasheet, Transistors, Comset Semiconductors

PDF File Details

Part number:

BDY54

Manufacturer:

Comset Semiconductors

File Size:

126.86kb

Download:

📄 Datasheet

Description:

(bdy53 / bdy54) npn silicon transistors.

Datasheet Preview: BDY54 📥 Download PDF (126.86kb)
Page 2 of BDY54 Page 3 of BDY54

TAGS

BDY54
BDY53
BDY54
NPN
SILICON
TRANSISTORS
Comset Semiconductors

📁 Related Datasheet

BDY53 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)=60V(Min.) ·Collector-Emitter Saturation Voltage- : VC.

BDY53 - (BDY53 / BDY54) NPN SILICON TRANSISTORS (Comset Semiconductors)
NPN BDY53 – BDY54 SILICON TRANSISTORS, DIFFUSED MESA They are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Swi.

BDY54 - Bipolar NPN Device (Seme LAB)
BDY54 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

BDY54 - SILICON NPN TRANSISTOR (TT)
SILICON NPN TRANSISTOR BDY54 • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options.

BDY54 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min.) ·Collector-Emitter Saturation Voltage- : .

BDY55 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDY55 .. DESCRIPTION ·With TO-3 package ·High current.

BDY55 - Bipolar NPN Device (Seme LAB)
BDY55 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

BDY55 - (BDY55 / BDY56) NPN SILICON TRANSISTORS (Comset Semiconductors)
BDY55 – BDY56 NPN SILICON TRANSISTORS, DIFFUSED MESA The BDY55 and BDY56 are mounted in TO-3 metal package. LF Large Signal Power Amplification High .

BDY55 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BDY55 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturatio.

BDY55X - Bipolar NPN Device (Seme LAB)
BDY55X Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts