* 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8
* Virtually unlimited endurance of 10 trillion (1013) read/write cycles
* 121-year data retention (see Data Retention and Endurance on page 19)
* NoDelay™ writes
* Advanced high-reliability ferroe
CY15V102QN Datasheet (428.20 KB)
CY15V102QN
Cypress Semiconductor
428.20 KB
2-mbit (256k x 8) automotive-e serial (spi) f-ram.
CY15B102QN CY15V102QN
Excelon™-Auto 2-Mbit (256K × 8) Automotive-E Serial (SPI) F-RAM
Excelon™-Auto 2-Mbit (256K × 8) Automotive-E Serial (SPI) F-RAM.
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