Datasheet Details
Part number:
CY15V116QSN, CY15B116QSN
Manufacturer:
File Size:
951.92 KB
Description:
16Mb Ultra Ferroelectric RAM
Note:
This datasheet PDF includes multiple part numbers: CY15V116QSN, CY15B116QSN.
Please refer to the document for exact specifications by model.
Features
* 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 94) - Infineon instant non-volatile write technology - Advanced hApplications
* requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash can cause data loss. The CY15x116QSN combines a 16-Mb F-RAM with the high-speed quad SPI (QPI) SDR anCY15V116QSN Distributors
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