CY15V116QSN - 16Mb Ultra Ferroelectric RAM
* Low-voltage operation: - CY15V116QSN: VDD = 1.71 V to 1.89 V - CY15B116QSN: VDD = 1.8 V to 3.6 V * Operating temperature: - Extended industrial: *40°C to +105°C * Packages - 24-ball fine pitch ball grid array (FBGA) * Restriction of hazardous substances (RoH
CY15V116QSN Features
* 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 94) - Infineon instant non-volatile write technology - Advanced h
