S29JL032J Datasheet - Cypress Semiconductor

S29JL032J - Simultaneous Read/Write Flash

The S29JL032J is a 32 Mb, 3.0 volt-only flash memory device, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each.

Word mode data appears on DQ15 *DQ0; byte mode data appears on DQ7 *DQ0.

The device is designed to be programmed in-system with the standard 3.0

S29JL032J 32-Mb (4M × 8-Bit/2M × 16-Bit), 3 V, Simultaneous Read/Write Flash Distinctive Characteristics Architectural Advantages Simultaneous Read/Write operations Data can be continuously read from one bank while executing erase/program functions in another bank.

Zero latency between read and write operations Multiple bank architecture Four bank architectures available (see Table 2 on page 15).

Boot sectors Top or bottom boot sector configurations ava

S29JL032J Features

* Supports Common Flash Memory Interface (CFI)

* Erase suspend/Erase resume

* Suspends erase operations to read data from, or program data to, a sector that is not being erased, then resumes the erase operation.

* Data# polling and toggle bits

* Provides a software method of dete

S29JL032J-CypressSemiconductor.pdf