CY62167GE

16-Mbit (1M Words x 16 Bit) Static RAM

Cypress

CY62167GE Features

* Ultra-low standby current

* Typical standby current: 5.5 A

* Maximum standby current: 16 A

* High speed: 45 ns/55 ns

* Embedded error-correcting code (ECC) for single-bit error correction

* Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V

* 1.0-

CY62167GE General Description

CY62167G and CY62167GE are high-performance CMOS, low-power (MoBL®) SRAM devices with embedded ECC[1]. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY62167GE device includes an ERR pin that signals a single-bit error-detection and correction.

CY62167GE Datasheet (666.22 KB)

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Datasheet Details

Part number:

CY62167GE

Manufacturer:

Cypress

File Size:

666.22 KB

Description:

16-mbit (1m words x 16 bit) static ram.
CY62167G/CY62167GE MoBL 16-Mbit (1M words × 16-bit/ 2M words × 8-bit) Static RAM with Error-Correcting Code (ECC) 16-Mbit (1M words × 16-bit/2M words.

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CY62167GE 16-Mbit Words Bit Static RAM Cypress

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CY62167GE Features

CY62167GE General Description

Datasheet Details

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