Description
CY62167G/CY62167GE MoBL 16-Mbit (1M words × 16-bit/ 2M words × 8-bit) Static RAM with Error-Correcting Code (ECC) 16-Mbit (1M words × 16-bit/2M words.
CY62167G and CY62167GE are high-performance CMOS, low-power (MoBL®) SRAM devices with embedded ECC[1].
Features
* Ultra-low standby current
* Typical standby current: 5.5 A
* Maximum standby current: 16 A
* High speed: 45 ns/55 ns
* Embedded error-correcting code (ECC) for single-bit error correction
* Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V
* 1.0-