BTB1182J3 - PNP Transistor
BTB1182J3 Features
* Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A
* Excellent current gain characteristics
* Complementary to BTD1758J3 Symbol BTB1182J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltag
