BTB1182J3 - PNP Transistor

Product Overview

Cystech Electonics Corp

Part number	BTB1182J3
Manufacturer	Cystech Electonics Corp
File Size	160.09 KB
Description	PNP Transistor
Datasheet	BTB1182J3 Datasheet
Additional preview pages of the BTB1182J3 datasheet.

Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A.
Excellent current gain characteristics.
Complementary to BTD1758J3 Symbol BTB1182J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : Single Pulse , Pw=10ms Sym.

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Published: Mar 9, 2010 |