Datasheet Details
- Part number
- BTB1182J3
- Manufacturer
- Cystech Electonics Corp
- File Size
- 160.09 KB
- Datasheet
- BTB1182J3_CystechElectonicsCorp.pdf
- Description
- PNP Transistor
BTB1182J3 Description
CYStech Electronics Corp.Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec.No.: C812J3 Issued Date : 2003.05.25 Revised Date : P.
BTB1182J3 Features
* Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A
* Excellent current gain characteristics
* Complementary to BTD1758J3
Symbol
BTB1182J3
Outline
TO-252
B：Base C：Collector E：Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltag
BTB1182J3 Applications
* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1182J3
CYStek Product Specification
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