BTB1197N3 PNP Transistor

Cystech Electonics Corp

Description

CYStech Electronics Corp.Low Saturation PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec.No.: C314N3 Issued Date : 2005.04.20 Revised Date.
The BTB1197N3 is designed with high current gain and low saturation voltage with collector current up to 1A continuous. Low VCE(SA.

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Datasheet Specifications

Part number: BTB1197N3
Manufacturer: Cystech Electonics Corp
File Size: 286.98 KB
Datasheet: BTB1197N3_CystechElectonicsCorp.pdf
Description: PNP Transistor

Features

* Low VCE(SAT) , VCE(SAT)≤ -0.3V (IC / IB=-1A/-100mA)
* Large collector current, IC=-1A
* Complementary to BTD1781N3.
* Pb-free package Symbol BTB1197N3 Outline SOT-23 B：Base C：Collector E：Emitter BTB1197N3 CYStek Product Specification CYStech Electronics Corp.

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1197N3 CYStek Product Specification

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BTB1197N3 PNP Transistor Cystech Electonics Corp

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