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BTC5181WC3 NPN Transistor

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Description

CYStech Electronics Corp.High Frequency NPN Epitaxial Planar Transistor Spec.No.: C213WC3 www.DataSheet4U.com Issued Date : 2003.08.15 Revised Dat.
The BTC5181WC3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification application.

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Features

* Low current consumption and high gain: ∣S21e∣² = 12dB ( typ. ) at VCE= 2 V, IC= 7 mA, f = 2 GHz ∣S21e∣² = 11dB ( typ. ) at VCE= 1 V, IC= 5 mA, f = 2 GHz

Applications

* Low noise and high gain amplifiers & Oscillator buffer amplifiers Absolute Maximum Ratings (TA=25℃) Parameters Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Tem

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