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BTA1300A3 - Low VCE(SAT) PNP Epitaxial Planar Transistor

BTA1300A3 Description

CYStech Electronics Corp.www.DataSheet4U.com Spec.No.: C816A3 Issued Date : 2003.04.15 Revised Date : Page No.: 1/4 Low VCE(SAT) PNP Epitaxial P.
The BTA1300A3 is designed especially for use in strobo flash and medium power amplifier applications. High DC current gain and excellent hF.

BTA1300A3 Features

* Symbol BTA1300A3 TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation Junction Temperature Storage T

BTA1300A3 Applications

* High DC current gain and excellent hFE linearity. HFE(1)=140
* 600(VCE=-1V,IC=-0.5A) HFE(2)=60(min), 120(typ. )(VCE=-1V,IC=-4A)

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Datasheet Details

Part number
BTA1300A3
Manufacturer
Cystech Electonics
File Size
188.61 KB
Datasheet
BTA1300A3_CystechElectonics.pdf
Description
Low VCE(SAT) PNP Epitaxial Planar Transistor

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Low VCESAT PNP Epitaxial Planar Transistor Cystech Electonics
Cystech Electonics BTA1300A3-like datasheet