BTD2097AI3 - NPN Epitaxial Planar Transistor
BTD2097AI3 Features
* Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A
* Excellent current gain characteristics www.DataSheet4U.com
* Complementary to BTB1412AI3 Symbol BTD2097AI3 Outline TO-251 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter C
