* Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A
* Excellent current gain characteristics www.DataSheet4U.com
* Complementary to BTB1412AI3 Symbol BTD2097AI3 Outline TO-251 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter C
BTD2097AI3 Datasheet (187.39 KB)
BTD2097AI3
Cystech Electonics
187.39 KB
Npn epitaxial planar transistor.
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C847I3-D9065T Issued Date : 2003.03.26 Revised Date : Page No. : 1/4.
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