BTN3501E3 High Speed Switching diode

Cystech Electonics

Description

CYStech Electronics Corp.www.DataSheet4U.com Spec.No.: C606E3 Issued Date : 2004.08.18 Revised Date : Page No.: 1/4 Low Vcesat NPN Epitaxial Pla.

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Datasheet Specifications

Part number: BTN3501E3
Manufacturer: Cystech Electonics
File Size: 200.36 KB
Datasheet: BTN3501E3_CystechElectonics.pdf
Description: High Speed Switching diode

Features

* Symbol BTN3501E3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Re

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN3501E3 CYStek Product Specification

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BTN3501E3 High Speed Switching diode Cystech Electonics

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