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BTN3501I3 High Speed Switching diode

BTN3501I3 Description

CYStech Electronics Corp.Low Vcesat NPN Epitaxial Planar Transistor BTN3501I3 .

BTN3501I3 Features

* Low VCE(sat)
* High BVCEO
* Excellent current gain characteristics
* RoHS compliant package BVCEO IC RCESAT Spec. No. : C606I3 Issued Date : 2003.11.25 Revised Date : 2009.02.04 Page No. : 1/5 80V 8A 60mΩ Symbol BTN3501I3 Outline TO-251 B：Base C：Collector E：Em

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Datasheet Details

Part number
BTN3501I3
Manufacturer
Cystech Electonics
File Size
218.76 KB
Datasheet
BTN3501I3_CystechElectonics.pdf
Description
High Speed Switching diode

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High Speed Switching diode Cystech Electonics
Cystech Electonics BTN3501I3-like datasheet