* High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
* Complement to BTP5401A3 Symbol BTN5551A3 Outline TO-92 B：Base C：Collector E：Emitter EBC Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collect
BTN5551A3 Datasheet (257.06 KB)
BTN5551A3
Cystech Electonics
257.06 KB
General purpose npn epitaxial planar transistor.
CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTN5551A3 Spec. No. : C208A3 Issued Date : 2003.06.06 Revised Date : 2012.1.
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