BTN5551A3 General Purpose NPN Epitaxial Planar Transistor

Cystech Electonics

Description

CYStech Electronics Corp.General Purpose NPN Epitaxial Planar Transistor BTN5551A3 Spec.No.: C208A3 Issued Date : 2003.06.06 Revised Date : 2012.1.
The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage. High collector-emitter breakdown volt.

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Datasheet Specifications

Part number: BTN5551A3
Manufacturer: Cystech Electonics
File Size: 257.06 KB
Datasheet: BTN5551A3_CystechElectonics.pdf
Description: General Purpose NPN Epitaxial Planar Transistor

Features

* High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
* Complement to BTP5401A3 Symbol BTN5551A3 Outline TO-92 B：Base C：Collector E：Emitter EBC Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collect

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BTN5551A3 General Purpose NPN Epitaxial Planar Transistor Cystech Electonics

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