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BTN5551A3 General Purpose NPN Epitaxial Planar Transistor

BTN5551A3 Description

CYStech Electronics Corp.General Purpose NPN Epitaxial Planar Transistor BTN5551A3 Spec.No.: C208A3 Issued Date : 2003.06.06 Revised Date : 2012.1.
The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage. High collector-emitter breakdown volt.

BTN5551A3 Features

* High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
* Complement to BTP5401A3 Symbol BTN5551A3 Outline TO-92 B：Base C：Collector E：Emitter EBC Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collect

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Datasheet Details

Part number
BTN5551A3
Manufacturer
Cystech Electonics
File Size
257.06 KB
Datasheet
BTN5551A3_CystechElectonics.pdf
Description
General Purpose NPN Epitaxial Planar Transistor

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General Purpose NPN Epitaxial Planar Transistor Cystech Electonics
Cystech Electonics BTN5551A3-like datasheet