BTN5551N3 General Purpose NPN Epitaxial Planar Transistor

Cystech Electonics

Description

CYStech Electronics Corp.www.DataSheet4U.com Spec.No.: C208N3-H Issued Date : 2003.06.06 Revised Date : Page No.: 1/4 General Purpose NPN Epitax.
The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage. High collector-emitter breakdown volt.

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Datasheet Specifications

Part number: BTN5551N3
Manufacturer: Cystech Electonics
File Size: 184.54 KB
Datasheet: BTN5551N3_CystechElectonics.pdf
Description: General Purpose NPN Epitaxial Planar Transistor

Features

* High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
* Complement to BTP5401N3 Symbol BTN5551N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cu

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BTN5551N3 General Purpose NPN Epitaxial Planar Transistor Cystech Electonics

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