HBN1803M65 - Octuple High Voltage NPN Epitaxial Planar Transistor
* High breakdown voltage.
(BVCEO=400V) * Low saturation voltage, typical VCE(sat) =0.12V at Ic/IB =20mA/1mA.
* Complementary to HBP1804M65 * Pb-free lead plating and halogen-free package Equivalent Circuit HBN1803M65 Outline MISWB6×5-18L-A Top View Bottom View H
