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HBN1803M65 Datasheet - Cystech Electonics

HBN1803M65 Octuple High Voltage NPN Epitaxial Planar Transistor

* High breakdown voltage. (BVCEO=400V) * Low saturation voltage, typical VCE(sat) =0.12V at Ic/IB =20mA/1mA. * Complementary to HBP1804M65 * Pb-free lead plating and halogen-free package Equivalent Circuit HBN1803M65 Outline MISWB6×5-18L-A Top View Bottom View H.

HBN1803M65-CystechElectonics.pdf

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Datasheet Details

Part number:

HBN1803M65

Manufacturer:

Cystech Electonics

File Size:

307.19 KB

Description:

Octuple high voltage npn epitaxial planar transistor.

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HBN1803M65 HBN1803M65 Octuple High Voltage NPN Epitaxial Planar Transistor Cystech Electonics

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