HBN1803M65 Datasheet - Cystech Electonics

Octuple High Voltage NPN Epitaxial Planar Transistor

HBN1803M65 General Description

* High breakdown voltage. (BVCEO=400V) * Low saturation voltage, typical VCE(sat) =0.12V at Ic/IB =20mA/1mA. * Complementary to HBP1804M65 * Pb-free lead plating and halogen-free package Equivalent Circuit HBN1803M65 Outline MISWB6×5-18L-A Top View Bottom View H.

HBN1803M65 Datasheet (307.19 KB)

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HBN1803M65

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Cystech Electonics

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Octuple high voltage npn epitaxial planar transistor.
CYStech Electronics Corp. Octuple High Voltage NPN Epitaxial Planar Transistor HBN1803M65 Spec. No. : C628M65 Issued Date : 2015.10.27 Revised Date :.

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HBN1803M65 General Description

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