* Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2A
* Simple Drive Requirement RDS(ON)@VGS=5V, ID=2A
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package 100V 10A 6.3A 3A 2.4A 70mΩ(typ) 82mΩ(typ)
MTDA0A10DH8 Datasheet (512.91 KB)
MTDA0A10DH8
Cystech Electonics
512.91 KB
Dual n-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C870H8 Issued Date : 2016.05.06 Revised Date : Page No. : 1/ 9 Dual N-Channel Enhancement Mode Power MOSFET M.
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