MTE050N10KRJ3 - N -Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTE050N10KRJ3
Manufacturer	Cystech Electonics
File Size	451.43 KB
Description	N -Channel Enhancement Mode Power MOSFET
Datasheet	MTE050N10KRJ3-CystechElectonics.pdf

Low Gate Charge.
Simple Drive Requirement.
ESD protected gate.
Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=10A 100V 13A 55.5mΩ(TYP) Equivalent Circuit MTE050N10KRJ3 Outline TO-252(DPAK) G DS G：Gate D：Drain S：Source Ordering Information Device MTE050N10KRJ3-0-T3-G Package Shipping TO-252 (Pb-free lead plating & Halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS complian.

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Published: Nov 4, 2024 |