MTE050N10KRJ3 Datasheet - Cystech Electonics

MTE050N10KRJ3 N -Channel Enhancement Mode Power MOSFET

MTE050N10KRJ3 Features

* Low Gate Charge

* Simple Drive Requirement

* ESD protected gate

* Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=10A 100V 13A 55.5mΩ(TYP) Equivalent Circuit MTE050N10KRJ3 Outline TO-252(DPAK) G DS G：Gate D：Drain S：Sour

MTE050N10KRJ3-CystechElectonics.pdf

MTE050N10KRJ3 Datasheet Preview — Preview of MTE050N10KRJ3 PDF

Datasheet Details

Part number:

MTE050N10KRJ3

Manufacturer:

Cystech Electonics

File Size:

451.43 KB

Description:

N -channel enhancement mode power mosfet.

MTE050N10KRJ3 Distributor

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MTE050N10KRJ3 MTE050N10KRJ3 -Channel Enhancement Mode Power MOSFET Cystech Electonics