MTE05N10E3 - N-Channel Enhancement Mode Power MOSFET
MTE05N10E3 Features
* Low Gate Charge
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* RoHS compliant package Symbol MTE05N10E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE05N10E3-0-UB-S Package TO-220
