MTE050P10E3 - P-Channel Enhancement Mode Power MOSFET
MTE050P10E3 Features
* Low Gate Charge
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* RoHS compliant package -100V -44A -4.6A 40mΩ Symbol MTE050P10E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE050P10E
