* Low Gate Charge
* Simple Drive Requirement
* Pb-free lead plating package RDSON(TYP) VGS=10V, ID=12A VGS=6V, ID=10A 100V 16A 83mΩ 100mΩ Equivalent Circuit MTEA0N10J3 Outline TO-252AB TO-252AA G：Gate D：Drain S：Source GDS G DS Absolute Maximum Ratings (TC=25°C, unle
MTEA0N10J3 Datasheet (264.25 KB)
MTEA0N10J3
Cystech Electonics
264.25 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C871J3 Issued Date : 2013.01.03 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTEA0N1.
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