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MTEA6C15J4 N & P-Channel Enhancement Mode Power MOSFET

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Description

CYStech Electronics Corp.Spec.No.: C938J4 Issued Date : 2013.12.04 Revised Date : 2013.12.30 Page No.: 1/13 N & P-Channel Enhancement Mode Power.

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Datasheet Specifications

Part number
MTEA6C15J4
Manufacturer
Cystech Electonics
File Size
290.50 KB
Datasheet
MTEA6C15J4-CystechElectonics.pdf
Description
N & P-Channel Enhancement Mode Power MOSFET

Features

* Low gate charge
* Simple drive requirement
* ESD protected
* Pb-free lead plating and halogen-free package RDSON(TYP)@VGS=10V(-10V) RDSON(TYP)@VGS=6V(-6V) N-CH 150V 9.3A 163mΩ 177mΩ P-CH -150V -7.1A 283mΩ 308Ω Equivalent Circuit MTEA6C15J4 Outline TO-252-4L G:

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