MTEA6C15J4 - N & P-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTEA6C15J4
Manufacturer	Cystech Electonics
File Size	290.50 KB
Description	N & P-Channel Enhancement Mode Power MOSFET
Datasheet	MTEA6C15J4-CystechElectonics.pdf

Low gate charge.
Simple drive requirement.
ESD protected.
Pb-free lead plating and halogen-free package RDSON(TYP)@VGS=10V(-10V) RDSON(TYP)@VGS=6V(-6V) N-CH 150V 9.3A 163mΩ 177mΩ P-CH -150V -7.1A 283mΩ 308Ω Equivalent Circuit MTEA6C15J4 Outline TO-252-4L G：Gate D：Drain S：Source Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V(-10V) Continuous Drain.

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Published: Aug 30, 2016 |