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BTD2118J3 NPN Epitaxial Planar Transistor

BTD2118J3 Description

CYStech Electronics Corp.Low Vcesat NPN Epitaxial Planar Transistor Spec.No.: C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No.: .

BTD2118J3 Features

* Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A
* Excellent current gain characteristics www. DataSheet4U. com
* Complementary to BTB1412J3 Symbol BTD2118J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Col

BTD2118J3 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2118J3 CYStek Product Specification

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Datasheet Details

Part number
BTD2118J3
Manufacturer
Cystech Electonics
File Size
182.77 KB
Datasheet
BTD2118J3_CystechElectonics.pdf
Description
NPN Epitaxial Planar Transistor

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NPN Epitaxial Planar Transistor Cystech Electonics
Cystech Electonics BTD2118J3-like datasheet