Datasheet4U Logo Datasheet4U.com

DG640 - N-CHANNEL ENHANCEMENT MODE MOSFET

📥 Download Datasheet

Preview of DG640 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
DG640
Manufacturer
DGME
File Size
744.49 KB
Datasheet
download datasheet DG640-DGME.pdf
Description
N-CHANNEL ENHANCEMENT MODE MOSFET

DG640 Product details

Description

DG640N，， ，，，。 ，，。 DG640 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Microelectronics’s proprietary.The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.MAIN CHARACTERISTICS VDS

📁 DG640 Similar Datasheet

  • DG641 - Low On-Resistance Wideband/Video Switches (Vishay Siliconix)
  • DG642 - Low On-Resistance Wideband/Video Switches (Vishay Siliconix)
  • DG643 - Low On-Resistance Wideband/Video Switches (Vishay Siliconix)
  • DG646BH25 - Gate Turn-off Thyristor (Dynex)
  • DG648BH45 - Gate Turn-off Thyristor (Dynex)
  • DG604 - 4-Channel Multiplexer (Vishay)
  • DG6045C - Ferrite Inductors (TOKO)
  • DG6050C - Ferrite Inductors (TOKO)
Other Datasheets by DGME
Published: |