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DG630 - N-CHANNEL ENHANCEMENT MODE MOSFET

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Datasheet Details

Part number
DG630
Manufacturer
DGME
File Size
741.47 KB
Datasheet
download datasheet DG630-DGME.pdf
Description
N-CHANNEL ENHANCEMENT MODE MOSFET

DG630 Product details

Description

DG630N，， ，，，。 ，，。 DG630 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Microelectronics’s proprietary.The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.MAIN CHARACTERISTICS VDS

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