DG636E Dual SPDT Analog Switch

Vishay

Description

www.vishay.com DG636E Vishay Siliconix 0.3 pC Charge Injection, 100 pA Leakage CMOS ± 5 V / 5 V / 3 V Dual SPDT Analog Switch .
The DG636E is a dual SPDT CMOS, analog switch, designed to operate from a +3 V to +16 V single supply, or from ± 3 V to ± 8 V, dual supplies.

📥 Download Datasheet

DG636E Datasheet Preview — Preview of DG636E PDF

Datasheet Specifications

Part number: DG636E
Manufacturer: Vishay ↗
File Size: 309.70 KB
Datasheet: DG636E-Vishay.pdf
Description: Dual SPDT Analog Switch

Features

* Ultra low charge injection (Less than ± 0.3 pC, typ. over the full analog signal range)
* Leakage current < 0.5 nA max. at 85 °C (for DG636EEQ-T1-GE4)
* Low switch capacitance (CS(off), 3.7 pF typ. )
* Fully specified with single supply operation at 3 V, 5 V, and dua

Applications

* Data acquisition systems
* Medical instruments
* Precision instruments
* Communications systems
* Automated test equipment
* Sample and hold circuit
* Relay replacement FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG636E mQFN-16 A0 NC NC A

DG636E Distributors

📁 Related Datasheet

DG630 DG6045C DG6050C DG611 DG612 DG613

📌 All Tags

DG636E Dual SPDT Analog Switch Vishay

Vishay DG636E-like datasheet