MJE3055 Datasheet, Transistor, DIGITRON

MJE3055 Features

• Transistor
• Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
• Available as non-RoHS (Sn/Pb plating), standard, a

PDF File Details

Part number:

MJE3055

Manufacturer:

DIGITRON

File Size:

433.16kb

Download:

📄 Datasheet

Description:

Npn silicon power transistor.

TAGS

MJE3055

DIGITRON

📁 Related Datasheet

MJE3055 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor MJE3055 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-10.

MJE3055 - NPN Silicon Transistor (Fairchild)
MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz.

MJE3055 - COMPLEMENTARY SILICON POWER TRANSISTORS (ST Microelectronics)
MJE2955T ® MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES DESCRIPTIO.

MJE3055 - COMPLEMENTARY SILICON POWER TRANSISTORS (ON)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE2955T/D Complementary Silicon Plastic Power Transistors MJE2955T * NPN MJE3055T * .

MJE3055 - Plastic-Encapsulate Transistors (GME)
Plastic-Encapsulate Transistors FEATURES  DC Current Gain Specified to 10A.  High Current Gain. Pb Lead-free Production specification MJE3055 TO.

MJE3055 - (MJE2955 / MJE3055) POWER TRANSISTORS (Motorola)
.. .. .

MJE3055 - NPN Transistor (JIANGSU CHANGJIANG ELECTRONICS)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors MJE3055 TRANSISTOR (NPN) FEATURES Power dissipation PCM: .

MJE3055A - Complementary Silicon power transistors (nELL)
SEMICONDUCTOR MJE3055A(NPN) MJE2955A(PNP) RRooHHSS Nell High Power Products Complementary Silicon power transistors (10A / 60V / 75W) FEATURES Des.

MJE3055AT - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor MJE3055AT DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High DC Current Gain- : hFE= 150.

MJE3055T - Complementary Silicon Plastic Power Transistors (ON Semiconductor)
MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and sw.