MJE3055TG
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Complementary silicon plastic power transistors.
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MJE3055T - Complementary Silicon Plastic Power Transistors
(ON Semiconductor)
MJE2955T (PNP), MJE3055T (NPN)
Complementary Silicon Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and sw.
MJE3055T - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
MJE3055T
Rev.F Mar.-2016
DATA SHEET
/ Descriptions
TO-220 NPN 。Silicon NPN transistor in a TO-220 Plastic Package.
/ Features
,。 Large DC cur.
MJE3055T - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
MJE3055T
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min) ·High DC Current Gain-
: hFE= 20-1.
MJE3055T - NPN Silicon Transistor
(Fairchild)
MJE3055T
MJE3055T
General Purpose and Switching Applications
• DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz.
MJE3055T - COMPLEMENTARY SILICON POWER TRANSISTORS
(ST Microelectronics)
MJE2955T ® MJE3055T
COMPLEMENTARY SILICON POWER TRANSISTORS
s STMicroelectronics PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION .
MJE3055T - 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE2955T/D
Complementary Silicon Plastic Power Transistors
MJE2955T * NPN MJE3055T *
.
MJE3055T - HIGH VOLTAGE TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
MJE3055T
NPN SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC MJE3055T is designed for general purp.
MJE3055T - Power Transistors
(RECTRON)
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
See Below for
Part #
TO-220 - Power Transistors and Darlingtons
TO-220
4
12 3
Pin Config 1. Base 2..
MJE3055T - NPN Transistor
(Central Semiconductor)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
.
MJE3055T - NPN PLASTIC POWER TRANSISTORS
(CDIL)
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PLASTIC POWER TRANSISTORS
MJE2955T PNP MJE3055T NPN
TO-220.