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MJE3055AT

Silicon NPN Power Transistor

MJE3055AT General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min)
*High DC Current Gain- : hFE= 150-260@IC= 1A
*Bandwidth Product- : fT = 2MHz(Min)@IC = 500 mA
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for use in general-.

MJE3055AT Datasheet (213.97 KB)

Preview of MJE3055AT PDF

Datasheet Details

Part number:

MJE3055AT

Manufacturer:

Inchange Semiconductor

File Size:

213.97 KB

Description:

Silicon npn power transistor.

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MJE3055AT Silicon NPN Power Transistor Inchange Semiconductor

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