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MJE3055AT Datasheet - Inchange Semiconductor

MJE3055AT Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) *High DC Current Gain- : hFE= 150-260@IC= 1A *Bandwidth Product- : fT = 2MHz(Min)@IC = 500 mA *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use in general-.

MJE3055AT-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

MJE3055AT

Manufacturer:

Inchange Semiconductor

File Size:

213.97 KB

Description:

Silicon npn power transistor.

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MJE3055AT MJE3055AT Silicon NPN Power Transistor Inchange Semiconductor