MJE3055AT Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor MJE3055AT .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min). High DC Current Gain- : hFE= 150-260@IC= 1A. Bandwidth Product- : fT = 2MHz(M.

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Datasheet Specifications

Part number: MJE3055AT
Manufacturer: Inchange Semiconductor
File Size: 213.97 KB
Datasheet: MJE3055AT-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A I

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MJE3055AT Silicon NPN Power Transistor Inchange Semiconductor

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