MJE3055AT Datasheet, Transistor, Inchange Semiconductor

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MJE3055AT

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Inchange Semiconductor

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213.97kb

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📄 Datasheet

Description:

Silicon npn power transistor.

  • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min)
  • High DC Current Gain- : hFE= 150-260@IC= 1A
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  • Datasheet Preview: MJE3055AT 📥 Download PDF (213.97kb)
    Page 2 of MJE3055AT Page 3 of MJE3055AT

    MJE3055AT Application

    • Applications
    • Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER

    TAGS

    MJE3055AT
    Silicon
    NPN
    Power
    Transistor
    Inchange Semiconductor

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