MJE3055AT - Silicon NPN Power Transistor

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Inchange Semiconductor

Datasheet Details

Part number	MJE3055AT
Manufacturer	Inchange Semiconductor
File Size	213.97 KB
Description	Silicon NPN Power Transistor
Datasheet	MJE3055AT Datasheet
Additional preview pages of the MJE3055AT datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) High DC Current Gain- : hFE= 150-260@IC= 1A Bandwidth Product- : fT = 2MHz(Min)@IC = 500 mA Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emi

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Published: Nov 11, 2016 |