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MJE3055T - Complementary Silicon Plastic Power Transistors

This page provides the datasheet information for the MJE3055T, a member of the MJE2955T Complementary Silicon Plastic Power Transistors family.

Features

  • High Current Gain.
  • Bandwidth Product.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – MJE3055T

Datasheet Details

Part number MJE3055T
Manufacturer ON Semiconductor
File Size 58.12 KB
Description Complementary Silicon Plastic Power Transistors
Datasheet download datasheet MJE3055T Datasheet
Additional preview pages of the MJE3055T datasheet.

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Full PDF Text Transcription

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MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCEO VCB VEB IC IB PD (Note 1) 60 70 5.0 10 6.0 75 0.6 Vdc Vdc Vdc Adc Adc W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
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