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MJE3055T Datasheet High Voltage Transistor

Manufacturer: Unisonic Technologies

Overview: UNISONIC TECHNOLOGIES CO., LTD MJE3055T NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR.

General Description

The UTC MJE3055T is designed for general purpose of amplifier and switching applications.

 ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE3055TL-TA3-T MJE3055TG-TA3-T MJE3055TL-TM3-T MJE3055TG-TM3-T MJE3055TL-TN3-R MJE3055TG-TN3-R Note: Pin Assignment: B: Base C: Case E: Emitter Package TO-220 TO-251 TO-252 Pin Assignment 123 BCE BCE BCE Packing Tube Tube Tape Reel  MARKING .unisonic..tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 3 QW-R203-011.E MJE3055T NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 70 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Total Power Dissipation TO-220 TO-251/TO-252 PD 75 W 20 W Collector Current IC 10 A Base Current IB 6 A Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

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