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MJE350 Silicon PNP Power Transistor

MJE350 Description

isc Silicon PNP Power Transistor .
Collector. Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min). DC Current Gain- : hFE = -100(Min) @ IC= -50mA. Low Collector Sa.

MJE350 Applications

* Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -3 V IC Collector Current-Continuous PC Collector Powe

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Datasheet Details

Part number
MJE350
Manufacturer
Inchange Semiconductor
File Size
212.36 KB
Datasheet
MJE350-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistor

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Silicon PNP Power Transistor Inchange Semiconductor
Inchange Semiconductor MJE350-like datasheet