MJE350 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Collector. Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min). DC Current Gain- : hFE = -100(Min) @ IC= -50mA. Low Collector Sa.

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Datasheet Specifications

Part number: MJE350
Manufacturer: Inchange Semiconductor
File Size: 212.36 KB
Datasheet: MJE350-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -3 V IC Collector Current-Continuous PC Collector Powe

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MJE350 Silicon PNP Power Transistor Inchange Semiconductor

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