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MJE350

Silicon PNP Power Transistor

MJE350 General Description


*Collector

*Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min)
*DC Current Gain- : hFE = -100(Min) @ IC= -50mA
*Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= -50mA
*Complement to the NPN MJE340
*Minimum Lot-to-Lot variations for robust device performan.

MJE350 Datasheet (212.36 KB)

Preview of MJE350 PDF

Datasheet Details

Part number:

MJE350

Manufacturer:

Inchange Semiconductor

File Size:

212.36 KB

Description:

Silicon pnp power transistor.

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