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MJE350G Plastic Medium-Power PNP Silicon Transistor
This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability.
http://onsemi.com Features
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High Collector−Emitter Sustaining Voltage Excellent DC Current Gain Plastic Thermopadt Package Complement to MJE340 These Devices are Pb−Free and are RoHS Compliant*
0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS, 20 WATTS
COLLECTOR 2, 4
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range Symbol VCEO VEB IC PD 20 0.16 TJ, Tstg –65 to +150 W mW/_C _C Value 300 3.
MJE350G Datasheet
