DMG1012UWQ N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

Description

DMG1012UWQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 0.45Ω @ VGS = 4.5V 0.6Ω @ VGS = 2.5V 0.75Ω @ VGS = 1.8V ID Max .
and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it id.

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Datasheet Specifications

Part number: DMG1012UWQ
Manufacturer: DIODES ↗
File Size: 525.83 KB
Datasheet: DMG1012UWQ-DIODES.pdf
Description: N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* The DMG1012UW

Applications

* This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* General Purpose Interfacing Switch
* Power Management Functions
* DC-DC Converters
* Analog Sw

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DMG1012UWQ N-CHANNEL ENHANCEMENT MODE MOSFET DIODES

DIODES DMG1012UWQ-like datasheet