* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected Up To 3kV
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qua
DMG1013TQ Datasheet (355.40 KB)
DMG1013TQ
355.40 KB
20v p-channel mosfet.
DMG1013TQ
20V P-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
Product Summary
BVDSS -20V
RDS(ON) Max
700mΩ @ VGS = -4.5V 900mΩ @ VGS = -2.5V 1300mΩ .
📁 Related Datasheet
DMG1013T - P-Channel MOSFET
(Diodes)
DMG1013T
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -20V
RDS(ON)
700mΩ @ VGS = -4.5V 900mΩ @ VGS = -2.5V 1300mΩ @ VGS = -1.8V
ID TA =.
DMG1013UW - P-Channel MOSFET
(Diodes)
DMG1013UW
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed .
DMG1013UWQ - P-Channel MOSFET
(Diodes)
Features
• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected • .
DMG1012T - N-Channel MOSFET
(Diodes)
Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up.
DMG1012T - N-Channel MOSFET
(VBsemi)
DMG1012T
DMG1012T N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) MAX.
0.270 at VGS = 4.5 V
20 0.390 at VGS = 2.5 V
ID (A) c 0.8.
DMG1012UW - N-Channel MOSFET
(Diodes)
Features
• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up.
DMG1016UDW - MOSFET
(Diodes)
NEW PRODUCT
DMG1016UDW
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device Q1 Q2
V(BR)DSS 20V
RDS(ON) 0.45Ω @ VGS = 4.5V 0.75Ω @ VG.
DMG1016V - MOSFET
(Diodes)
..
DMG1016V
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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Features
• • •.
