DMG1013T P-Channel MOSFET

Diodes

Description

DMG1013T P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) 700mΩ @ VGS = -4.5V 900mΩ @ VGS = -2.5V 1300mΩ @ VGS = -1.8V ID TA =.
and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, mak.

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Datasheet Specifications

Part number: DMG1013T
Manufacturer: DIODES ↗
File Size: 359.85 KB
Datasheet: DMG1013T_Diodes.pdf
Description: P-Channel MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected Up to 3kV
* Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
* Halogen and Antimony Free. “

Applications

* This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
* DC-DC converters
* Load switches

DMG1013T Distributors

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DMG1013T P-Channel MOSFET Diodes

Diodes DMG1013T-like datasheet