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DMG3N60SJ3

N-Channel MOSFET

DMG3N60SJ3 Features

* Drain Current

* ID= 2.8A@ TC=25℃

* Drain Source Voltage- : VDSS= 600V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 350mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for us

DMG3N60SJ3 General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 V ±30 V ID Drain Current-Continuous 2.8 A IDM Drain Current-Single Pluse.

DMG3N60SJ3 Datasheet (269.11 KB)

Preview of DMG3N60SJ3 PDF

Datasheet Details

Part number:

DMG3N60SJ3

Manufacturer:

INCHANGE

File Size:

269.11 KB

Description:

N-channel mosfet.

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DMG3N60SJ3 N-Channel MOSFET INCHANGE

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