DMG4800LK3 - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	DMG4800LK3
Manufacturer	INCHANGE
File Size	261.94 KB
Description	N-Channel MOSFET
Datasheet	DMG4800LK3 Datasheet
Additional preview pages of the DMG4800LK3 datasheet.

Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 30 V ±25 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 48 A PD Total Dissipation @TC=25℃ 1.71 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-A Th

Features

Drain Current.
ID= 10A@ TC=25℃.
Drain Source Voltage- : VDSS= 30V(Min).
Static Drain-Source On-Resistance : RDS(on) = 17mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: May 10, 2021 |