* DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:
* Low RDS(ON) - minimizes conduction losses
* Low VSD - reducing the losses due to body diode conduction
* Low Qrr - lower Qrr of the integrated Schottky reduce
DMG4812SSS Datasheet (233.68 KB)
DMG4812SSS
233.68 KB
N-channel mosfet.
DMG4812SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Product Summary
V(BR)DSS 30V
RDS(on)
15mΩ @ VGS= 10V 18.5mΩ @ VGS= 4.5V
ID max
TA.
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