* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* This part is qualified to JEDEC s
DMG3402L Datasheet (729.78 KB)
DMG3402L
729.78 KB
N-channel mosfet.
DMG3402L
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
BVDSS 30V
RDS(ON)
52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = 2.5V
.
📁 Related Datasheet
DMG3402LQ - N-Channel MOSFET
(DIODES)
DMG3402LQ
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
BVDSS 30V
RDS(ON) MAX
52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = .
DMG3401LSN - P-Channel MOSFET
(Diodes)
NEW PRODUCT
DMG3401LSN
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -30V
RDS(on) max
50mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V 85mΩ @.
DMG3401LSNQ - 30V P-Channel MOSFET
(DIODES)
DMG3401LSNQ
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -30V
RDS(on) max
50mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V 85mΩ @ VGS = -2.5V.
DMG3404L - N-Channel MOSFET
(Diodes)
DMG3404L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) Max 25mΩ @ VGS = 10V 35mΩ @ VGS = 4.5V
ID Max TA = +25°C
5.8A
4.8A
F.
DMG3406L - N-Channel MOSFET
(Diodes)
NEW PRODUCT
Product Summary
V(BR)DSS 30V
RDS(ON) Max 50mΩ @ VGS = 10V 70mΩ @ VGS = 4.5V
ID Max TA = +25°C
3.6A
2.8A
DMG3406L
N-CHANNEL ENHANCEMEN.
DMG3407SSN - P-Channel MOSFET
(Diodes)
ADVANCE INFORMATION
DMG3407SSN
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -30V
RDS(ON) max 50mΩ @ VGS = -10V 72mΩ @ VGS = -4.5V
ID m.
DMG3413L - 20V P-Channel MOSFET
(Diodes)
NEW PRODUCT
DMG3413L
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -20V
RDS(on) max
95mΩ @ VGS = -4.5V 130mΩ @ VGS = -2.5V
ID TA.
DMG3414U - N-Channel MOSFET
(Diodes)
DMG3414U
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
Low On-Resistance 25mΩ @ VGS = 4.5V 29mΩ @ VGS = 2.5V 37mΩ @ VGS = 1.8V.
