DMG3407SSN Datasheet, Mosfet, Diodes

DMG3407SSN Features

• Mosfet
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1

PDF File Details

Part number:

DMG3407SSN

Manufacturer:

DIODES ↗

File Size:

443.31kb

Download:

📄 Datasheet

Description:

P-channel mosfet. and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching perf

DMG3407SSN Application

• Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it

TAGS

DMG3407SSN

Diodes

📁 Related Datasheet

DMG3401LSN - P-Channel MOSFET (Diodes)
NEW PRODUCT DMG3401LSN 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -30V RDS(on) max 50mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V 85mΩ @.

DMG3401LSNQ - 30V P-Channel MOSFET (DIODES)
DMG3401LSNQ 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -30V RDS(on) max 50mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V 85mΩ @ VGS = -2.5V.

DMG3402L - N-Channel MOSFET (Diodes)
DMG3402L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 30V RDS(ON) 52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = 2.5V .

DMG3402LQ - N-Channel MOSFET (DIODES)
DMG3402LQ N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 30V RDS(ON) MAX 52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = .

DMG3404L - N-Channel MOSFET (Diodes)
DMG3404L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 25mΩ @ VGS = 10V 35mΩ @ VGS = 4.5V ID Max TA = +25°C 5.8A 4.8A F.

DMG3406L - N-Channel MOSFET (Diodes)
NEW PRODUCT Product Summary V(BR)DSS 30V RDS(ON) Max 50mΩ @ VGS = 10V 70mΩ @ VGS = 4.5V ID Max TA = +25°C 3.6A 2.8A DMG3406L N-CHANNEL ENHANCEMEN.

DMG3413L - 20V P-Channel MOSFET (Diodes)
NEW PRODUCT DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -20V RDS(on) max 95mΩ @ VGS = -4.5V 130mΩ @ VGS = -2.5V ID TA.

DMG3414U - N-Channel MOSFET (Diodes)
DMG3414U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data  Low On-Resistance  25mΩ @ VGS = 4.5V  29mΩ @ VGS = 2.5V  37mΩ @ VGS = 1.8V.

DMG3414UQ - N-CHANNEL MOSFET (Diodes)
DMG3414UQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS 20V RDS(ON) Max 25mΩ @ VGS = 4.5V 29mΩ @ VGS = 2.5V 37mΩ @ VGS = 1.8V .

DMG3415U - P-Channel MOSFET (Diodes)
NOT RECOMMENDED FOR NEW DESIGN USE DMP2045U DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) max 42.5mΩ @ VGS = -4.5.