Part number:
DMG3N60SCT
Manufacturer:
INCHANGE
File Size:
246.53 KB
Description:
N-channel mosfet.
* Static drain-source on-resistance: RDS(on) ≤ 3.5Ω
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATION
* DC/DC Converter
* Motor Control
* ABSOLUTE MA
DMG3N60SCT Datasheet (246.53 KB)
DMG3N60SCT
INCHANGE
246.53 KB
N-channel mosfet.
📁 Related Datasheet
DMG3N60SJ3 - N-CHANNEL MOSFET
(Diodes)
DMG3N60SJ3
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS (@ TJ Max)
650V
RDS(ON) Max 3.5Ω @ VGS = 10V
ID @TC = +25°C
2.8A
Description a.
DMG3N60SJ3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 2.8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance.
DMG301NU - 25V N-Channel MOSFET
(Diodes)
DMG301NU
25V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 25V
RDS(ON)
4Ω @ VGS = 4.5V 5Ω @ VGS = 2.7V
ID TA = +25°C
0.26A
0.23A
Des.
DMG302PU - P-Channel MOSFET
(Diodes)
NEW PRODUCT
DMG302PU
25V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -25V
RDS(ON)
10Ω @ VGS = -4.5V 13Ω @ VGS = -2.7V
ID TA = +25°.
DMG3401LSN - P-Channel MOSFET
(Diodes)
NEW PRODUCT
DMG3401LSN
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -30V
RDS(on) max
50mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V 85mΩ @.
DMG3401LSNQ - 30V P-Channel MOSFET
(DIODES)
DMG3401LSNQ
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -30V
RDS(on) max
50mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V 85mΩ @ VGS = -2.5V.
DMG3402L - N-Channel MOSFET
(Diodes)
DMG3402L
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
BVDSS 30V
RDS(ON)
52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = 2.5V
.
DMG3402LQ - N-Channel MOSFET
(DIODES)
DMG3402LQ
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
BVDSS 30V
RDS(ON) MAX
52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = .