DMG10N60SCT
INCHANGE
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N-channel mosfet. *Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE
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DMG10N60SCT - N-CHANNEL MOSFET
(Diodes)
Product Summary
BVDSS 600V
RDS(ON) 0.75Ω@VGS = 10V
ID TC = +25°C
12A
DMG10N60SCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low Inp.
DMG1012T - N-Channel MOSFET
(Diodes)
Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up.
DMG1012T - N-Channel MOSFET
(VBsemi)
DMG1012T
DMG1012T N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) MAX.
0.270 at VGS = 4.5 V
20 0.390 at VGS = 2.5 V
ID (A) c 0.8.
DMG1012UW - N-Channel MOSFET
(Diodes)
Features
• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up.
DMG1013T - P-Channel MOSFET
(Diodes)
DMG1013T
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -20V
RDS(ON)
700mΩ @ VGS = -4.5V 900mΩ @ VGS = -2.5V 1300mΩ @ VGS = -1.8V
ID TA =.
DMG1013TQ - 20V P-CHANNEL MOSFET
(Diodes)
DMG1013TQ
20V P-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
Product Summary
BVDSS -20V
RDS(ON) Max
700mΩ @ VGS = -4.5V 900mΩ @ VGS = -2.5V 1300mΩ .
DMG1013UW - P-Channel MOSFET
(Diodes)
DMG1013UW
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed .
DMG1013UWQ - P-Channel MOSFET
(Diodes)
Features
• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected • .
DMG1016UDW - MOSFET
(Diodes)
NEW PRODUCT
DMG1016UDW
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device Q1 Q2
V(BR)DSS 20V
RDS(ON) 0.45Ω @ VGS = 4.5V 0.75Ω @ VG.
DMG1016V - MOSFET
(Diodes)
..
DMG1016V
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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Features
• • •.