DMG3N60SJ3 N-CHANNEL MOSFET

Diodes

Description

DMG3N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V RDS(ON) Max 3.5Ω @ VGS = 10V ID @TC = +25°C 2.8A .
and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, mak.

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Datasheet Specifications

Part number: DMG3N60SJ3
Manufacturer: DIODES ↗
File Size: 437.21 KB
Datasheet: DMG3N60SJ3-Diodes.pdf
Description: N-CHANNEL MOSFET

Features

* Low On-Resistance

Applications

* This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Motor Control
* Backlighting
* DC-DC Converters

DMG3N60SJ3 Distributors

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DMG3N60SJ3 N-CHANNEL MOSFET Diodes

Diodes DMG3N60SJ3-like datasheet